Identification of fatigue crack extension process in zero-tension cyclic stress test of polysilicon films
Identification of fatigue crack extension process in zero-tension cyclic stress test of polysilicon films
复制标题
多晶硅薄膜零拉循环应力试验中疲劳裂纹扩展过程的识别
DOI：
10.1109/memsys.2012.6170168
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
O. Paul
中科院分区：
文献类型：
--
作者：
V. Le Huy;S. Kamiya;J. Gaspar;O. Paul
本文提出了多晶硅薄膜缺口试件在零拉伸循环应力试验中疲劳裂纹扩展过程的证据。在扫描电子显微镜观察的断口上发现了初始裂纹及其疲劳扩展。根据静态和疲劳试验数据估算出的参数，利用巴黎定律对疲劳裂纹扩展过程进行了详细的定量分析。裂纹长度的观测值与估算值基本一致。结果表明，疲劳裂纹扩展到硅本身。
This paper presents evidence for a fatigue crack extension process in zero-tension cyclic stress test of polysilicon film specimens with notches. Initial cracks and their fatigue extension were found on the fracture surfaces observed in a scanning electron microscope. The fatigue crack extension process was quantitatively analyzed in detail using Paris' law on the basis of the parameters evaluated from static and fatigue test data. The observed and estimated crack lengths are consistent with each other. The results suggest that the fatigue crack extend into the silicon itself.