Quenching of magnetoresistance by hot electrons in magnetic tunnel junctions
Quenching of magnetoresistance by hot electrons in magnetic tunnel junctions
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DOI：
10.1103/physrevlett.79.3744
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发表时间：
1997-11
影响因子：
8.6
通讯作者：
Shufeng Zhang;P. Levy;A. Marley;S. Parkin
中科院分区：
文献类型：
--
作者：
Shufeng Zhang;P. Levy;A. Marley;S. Parkin
A zero bias anomaly is observed at low temperatures in the current-voltage characteristics of ferromagnetic tunnel junctions; the drop in the junction resistance with increasing bias voltage is greater for antiparallel alignment of the magnetic moments of the magnetic electrodes than for parallel alignment. The resulting decrease in the magnetoresistance of the junction is accounted for by spin excitations localized at the interfaces between the magnetic electrodes and the tunnel barrier.
