GaN Light-Emitting Diodes for up to 5.5-Gb/s Short-Reach Data Transmission Over SI-POF
GaN Light-Emitting Diodes for up to 5.5-Gb/s Short-Reach Data Transmission Over SI-POF
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GaN 发光二极管可通过 SI-POF 实现高达 5.5 Gb/s 的短距离数据传输
DOI：
10.1109/lpt.2014.2359073
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发表时间：
2014
影响因子：
2.6
通讯作者：
O. Ziemann
中科院分区：
文献类型：
--
作者：
J. Vinogradov;R. Kruglov;K. Chi;Jin;Martin Bloos;S. Loquai;O. Ziemann
我们报告了一个高速数据传输超过1毫米直径的阶跃折射率聚合物光纤（SI-POF）与GaN发光二极管（LED）工作在435和475 nm。LED在40 mA时的调制带宽分别为180和300 MHz。采用475 nm GaN LED，在-1.8 dBm光纤耦合功率下，采用4脉冲幅度调制方式，在1 m SI-POF上实现了5.5 Gb/s的最大比特率。与相同测试条件下的高速红色谐振腔LED相比，当传输距离大于30 m时，色散降低了GaN LED系统的性能。
We report a high-speed data transmission over a 1-mm diameter step-index polymer optical fiber (SI-POF) with GaN light-emitting diodes (LEDs) operating at 435 and 475 nm. The modulation bandwidths of the LEDs at 40 mA were 180 and 300 MHz, respectively. A maximum bit rate of 5.5 Gb/s was achieved with a 475-nm GaN LED at -1.8-dBm fiber-coupled power over a 1-m SI-POF employing 4-pulse-amplitude modulation format. Compared with the performance of a high-speed red resonant-cavity LED under the same test setup, the chromatic dispersion reduces the potential of the GaN LED-based system when the transmission distance is longer than 30 m.
影响因子：
4.7
作者：
McKendry, Jonathan J. D.;Massoubre, David;Dawson, Martin D.
通讯作者：
Dawson, Martin D.