Flexible memristors based on single-crystalline ferroelectric tunnel junctions.
Flexible memristors based on single-crystalline ferroelectric tunnel junctions.
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DOI：
10.1021/acsami.9b04738
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发表时间：
2019-06
影响因子：
9.5
通讯作者：
Zheng‐Dong Luo;J. J. Peters-J.;A. Sánchez;M. Alexe
中科院分区：
文献类型：
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作者：
Zheng‐Dong Luo;J. J. Peters-J.;A. Sánchez;M. Alexe
基于铁电隧道结(FTJ)的忆阻器具有连续电场可控的阻态，被认为是未来高密度存储和高级神经形态计算结构的候选材料。然而，硬质单晶衬底的使用和外延FTJ薄膜的高温生长是将这种异质结构应用于柔性计算设备的主要障碍。在这里，我们报道了在柔性塑料衬底上，通过水蚀刻法外延氧化膜剥离和后续转移，实现厘米级单晶FTJ的集成。由此得到的高度柔韧的FTJ膜保持了单晶结构以及稳定和可切换的铁电极化作为生长的单晶衬底状态。结果表明，所制得的柔性记忆阻器，即塑料衬底上的FTJ，表现出高速、低电压介电行为，其电阻变化率超过500%，且对形状变化具有稳定性。这项工作是在大面积、柔性和负担得起的衬底上实现基于外延超薄铁电氧化物薄膜的电子设备的关键一步。
Ferroelectric tunnel junction (FTJ) based memristors exhibiting continuously electric field controllable resistance states have been considered as the promising candidate for future high-density memories and advanced neuromorphic computational architectures. However, use of rigid single crystal substrate and high temperature growth of the epitaxial FTJ thin films constitute main obstacles to using this kind of heterostructures in flexible computing devices. Here, we report the integration of centimeter-scale single crystalline FTJs on flexible plastic substrates, by water-etching based epitaxial oxide membrane lift-off and the following transfer. The resulting highly flexible FTJ membranes retain the single-crystalline structure along with stable and switchable ferroelectric polarization as the grown-on single crystal substrate state. We show that the obtained flexible memristors i.e., FTJs on plastic substrates, present high speed and low voltage mediated memristive behaviors with resistance changes over 500% and are stable against shape change. This work is an essential step towards the realization of epitaxial ultrathin ferroelectric oxide film-based electronics on large-area, flexible and affordable substrates.