Effects of Hydrogen-Only Interrupts on InGaAs/lnP Superlattices Grown by OMVPE
Effects of Hydrogen-Only Interrupts on InGaAs/lnP Superlattices Grown by OMVPE
复制标题
仅氢中断对 OMVPE 生长的 InGaAs/lnP 超晶格的影响
DOI：
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发表时间：
1992
期刊：
影响因子：
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通讯作者：
C. Hanson
中科院分区：
文献类型：
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作者：
A. Clawson;T. T. Vu;S. Pappert;C. Hanson
摘要利用OMVPE技术生长了InGaAs/InP超晶格，采用短间隔的纯H2生长中断来消除异质结界面处氢化物气体的混合。通过X射线衍射测量了层间合金化引起的晶格应变的变化。应变的变化是小的和一致的表面分解时，暴露于非平衡H2蒸气。在InGaAs到InP的过渡处，可以看到H2中断的可能的界面平滑。一个大的压缩应变的贡献是不受影响的中断，是由于携带到InP从周围的固体沉积物，而不是运输气体。
Abstract Superlattices of InGaAs/InP have been grown by OMVPE using short interval H2-only growth interrupts to eliminate intermixing of hydride gases at the heterojunction interfaces. Changes in lattice strain resulting from interlayer alloying were measured by X-ray diffraction. The changes in strain are small and consistent with decomposition of the surfaces when exposed to the nonequilibrium H2 vapor. Possible interface smoothing is seen with H2 interrupt at the InGaAs to InP transition. A large compressive strain contribution is unaffected by the interrupts and is attributed to As carryover into the InP from surrounding solid deposits rather than the transport gases.