Room‐temperature luminescence from erbium‐doped silicon thin films prepared by laser ablation
Room‐temperature luminescence from erbium‐doped silicon thin films prepared by laser ablation
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激光烧蚀制备的掺铒硅薄膜的室温发光
DOI：
10.1063/1.117562
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发表时间：
1996
影响因子：
4
通讯作者：
Y. Aoyagi
中科院分区：
文献类型：
--
作者：
S. Komuro;S. Maruyama;T. Morikawa;Xinwei Zhao;H. Isshiki;Y. Aoyagi
我们提出了一种有用且简单的技术，利用 KrF 准分子激光烧蚀制备可控掺铒硅薄膜。从 18 K 到室温，观察到源自 Er3+ 离子中 4f 壳层内跃迁的 1.54 μm 处的尖锐强光致发光 (PL)。所制备的掺铒硅薄膜的PL热猝灭和时间衰减特性与掺铒多孔硅和/或掺铒非晶硅非常相似。此外，对未经热退火的所制备薄膜的 Er3+ 发射的观察表明，激光烧蚀产生的 Er 原子自由基物质形式的 Er 掺杂对于 Er3+ 离子的激活至关重要。此外，在块状靶材中加入规定量的铒使我们能够控制激光烧蚀制备的薄膜中的铒掺杂水平。
We present a useful and simple technique to prepare controllable Er‐doped Si thin films using KrF excimer laser ablation. The sharp intense photoluminescence (PL) at 1.54 μm originating from the intra‐4f shell transition in Er3+ ions was observed from 18 K up to room temperature. Characteristics of PL thermal quenching and time decay of prepared Er‐doped Si thin films are very similar to those of Er‐doped porous Si and/or Er‐doped amorphous Si. Furthermore, observation of Er3+ emission from as‐prepared thin films without thermal annealing suggests that the Er doping in the form of Er atomic radical species produced by laser ablation is essential in activation of Er3+ ions. Moreover, incorporating a prescribed amount of Er in the bulk target enables us to control the Er doping level in thin films prepared by laser ablation.