Electroluminescence from a Single Pyramidal Quantum Dot in a Light-Emitting Diode
Electroluminescence from a Single Pyramidal Quantum Dot in a Light-Emitting Diode
复制标题
发光二极管中单个金字塔量子点的电致发光
DOI：
10.1063/1.1687453
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发表时间：
2004
影响因子：
4
通讯作者：
E. Kapon
中科院分区：
文献类型：
--
作者：
M. Baier;C. Constantin;E. Pelucchi;E. Kapon
我们报告了量子点发光二极管 (QD-LED) 的制造，该二极管通过在金字塔凹槽图案上外延生长获得的单个自形成 QD 表现出电致发光。此外，还证明了通过亚微米金属接触和连接到QD有源区域的20纳米宽的自形成低电势垂直沟道进行选择性载流子注入，从而提高了注入效率。开发的制造工艺提供了充分的灵活性，可以将发射器的数量和位置控制在微米尺寸的紧凑型 LED 中，直至单个 QD。这使得该系统成为量子信息应用的高效电驱动单光子源的理想候选者。
We report on the fabrication of a quantum-dot light-emitting diode (QD-LED), exhibiting electroluminescence from a single, self-formed QD obtained by epitaxial growth on pyramidal recess patterns. Moreover, selective carrier injection through a submicron metal contact and a 20-nm-wide self-formed low potential vertical channel connected to the QD active area is demonstrated, resulting in enhanced injection efficiency. The developed fabrication process offers full flexibility to control the number and position of the emitters down to a single QD in a micron-size compact LED. This makes this system an ideal candidate for efficient, electrically driven single-photon sources for quantum information applications.