Lithographic in-mold patterning for CsPbBr<sub>3</sub> nanocrystals distributed Bragg reflector single-mode laser

Lithographic in-mold patterning for CsPbBr<sub>3</sub> nanocrystals distributed Bragg reflector single-mode laser
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CsPbBr<sub>3</sub>纳米晶分布式布拉格反射单模激光器光刻模内图案化

DOI:
10.1039/d1nr04543a
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发表时间:
2021
期刊:
影响因子:
6.7
通讯作者:
Delaunay Jean-Jacques
Delaunay Jean-Jacques
中科院分区:
材料科学2区
文献类型:
--
作者:
Ahmad Kamal Ahmad Syazwan;Lin Cheng-Chieh;Xing Di;Lee Yang-Chun;Wang Zhiyu;Chen Mu-Hsin;Ho Ya-Lun;Chen Chun-Wei;Delaunay Jean-Jacques

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对卤化铅钙钛矿的广泛研究表明,这些材料是作为增益介质的优秀候选者。最近,已经做出了许多努力来将钙钛矿激光器并入集成光学电路中。可能的解决方案将是利用具有蚀刻/剥离工艺或直接激光蚀刻技术的标准光刻。然而,由于卤化铅钙钛矿的易碎性质,其在光刻和蚀刻工艺期间引起显著的材料劣化,因此实现小尺寸、低粗糙度和单模激光器仍然是一个挑战。在这里,光刻模内图案化的方法实现了通过掺杂浓度控制和多步填充-干燥过程中,提出了展示CsPbBr 3纳米晶体分布布拉格反射器(DBR)波导激光器。该方法实现了CsPbBr 3 Nd:YAG激光器谐振腔和DBR光栅的图形化,无需剥离和刻蚀工艺,最小制作结构尺寸在几百纳米内。在室温下,单模激光的阈值为23.5 μJ cm−2。激光输出的最小半高全宽为0.4nm。由于制造工艺和DBR激光器的几何形状,激光器可以以紧凑的阵列制造,这对于将基于钙钛矿的激光器并入复杂的光电电路中是重要的。
Extensive studies on lead halide perovskites have shown that these materials are excellent candidates as gain mediums. Recently, many efforts have been made to incorporate perovskite lasers in integrated optical circuits. Possible solutions would be to utilize standard lithography with an etching/lift-off process or a direct laser etching technique. However, due to the fragile nature of the lead halide perovskites which gives rise to significant material deterioration during the lithography and etching processes, realizing a small-size, low-roughness, and single-mode laser remains a challenge. Here, a lithographic in-mold patterning method realized by nanocrystal concentration control and a multi-step filling-drying process is proposed to demonstrate CsPbBr3 nanocrystals distributed-Bragg-reflector (DBR) waveguide lasers. This method realizes the patterning of the CsPbBr3 nanocrystal laser cavity and DBR grating without lift-off and etching processes, and the smallest fabricated structures are obtained in a few hundred nanometers. The single-mode lasing is demonstrated at room temperature with a threshold of 23.5 μJ cm−2. The smallest full width at half maximum FWHM of the laser output is 0.4 nm. Due to the fabrication process and the DBR laser geometry, the lasers can be fabricated in a compact array, which is important for incorporating perovskite-based lasers in complex optoelectronic circuits.