Modeling of electrical transport in Zinc Oxide varistors
Modeling of electrical transport in Zinc Oxide varistors
复制标题
氧化锌压敏电阻中的电传输建模
DOI：
10.5194/ars-12-29-2014
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发表时间：
2014
影响因子：
0.4
通讯作者：
T. Weiland
中科院分区：
文献类型：
--
作者：
K. Bavelis;E. Gjonaj;T. Weiland
抽象的。采用微结构材料模型分析了氧化锌压敏电阻的电输运特性。全三维的电流分布计算的非线性等效电路模型的装置代表载流晶粒和晶界的材料的组装。研究的重点是由于压敏电阻微观结构的不均匀性的电流抑制现象。数值结果突出了3-D渗流效应的重要性，在建模的压敏电阻电流以及到目前为止一直被忽略在以前的研究中的晶粒体积电阻率。
Abstract. The electrical transport in zinc oxide (ZnO) varistors is analyzed using microstructural material modeling. The fully three dimensional current distribution is computed by means of a nonlinear equivalent circuit model representing the assembly of current carrying grains and grain boundaries of the material. The investigation focuses on the phenomenon of current filamentation due to inhomogeneities of the varistor microstructure. Numerical results highlight the importance of 3-D percolation effects in the modeling of varistor currents as well as that of the grain bulk resistivity which so far has been neglected in previous studies.