Pulse repetition rate scaling from 5 to 100 GHz with a high-power semiconductor disk laser
Pulse repetition rate scaling from 5 to 100 GHz with a high-power semiconductor disk laser
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DOI:
10.1364/oe.22.006099
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发表时间:
2014-03-10
期刊:
影响因子:
3.8
通讯作者:
Keller, Ursula
中科院分区:
文献类型:
--
作者:
Mangold, Mario;Zaugg, Christian A.;Keller, Ursula
The high-power semiconductor laser studied here is a modelocked integrated external-cavity surface emitting laser (MIXSEL), which combines the gain of vertical-external-cavity surface-emitting lasers (VECSELs) with the saturable absorber of a semiconductor saturable absorber mirror (SESAM) in a single semiconductor layer stack. The MIXSEL concept allows for stable and self-starting fundamental passive modelocking in a simple straight cavity and the average power scaling is based on the semiconductor disk laser concept. Previously record-high average output power from an optically pumped MIXSEL was demonstrated, however the long pulse duration of 17 ps prevented higher pulse repetition rates and many interesting applications such as supercontinuum generation and broadband frequency comb generation. With a novel MIXSEL structure, the first femtosecond operation was then demonstrated just recently. Here we show that such a MIXSEL can also support pulse repetition rate scaling from approximate to 5 GHz to >100 GHz with excellent beam quality and high average output power, by mechanically changing the cavity length of the linear straight cavity and the output coupler. Up to a pulse repetition rate of 15 GHz we obtained average output power >1 W and pulse durations