Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate
Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate
复制标题
半绝缘衬底上离子注入 4H-SiC MESFET 电特性的改善
DOI：
10.4028/www.scientific.net/msf.556-557.803
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
M. Arai
中科院分区：
文献类型：
--
作者：
S. Katakami;M. Ogata;S. Ono;M. Arai
SiC-MESFET的电学特性受沟道结构特性的影响，例如杂质浓度和厚度。采用离子注入技术制备的MESFFET，可以形成比传统外延生长更薄、掺杂更高的沟道层，从而改善MESFFET的RF特性。我们使用模拟器计算了离子注入SiC-MESFET的沟道层的掺杂分布，然后制造了具有从模拟获得的相同掺杂分布的SiC-MESFET。离子注入SiC-MESFET成功地工作，并具有与外延SiC-MESFET相同的电特性。我们证明了一步注入沟道层的离子注入SiC-MESFET的有效性。
The electrical characteristics of a SiC-MESFET are affected by the channel structure characteristics, such as impurity density and thickness. MESFETs fabricated with ion implantation technique, can form thinner and higher doped channel layers than those fabricated with conventional epitaxial growth, thus improve RF characteristics of MESFETs. We calculated the doping profile of the channel layer for an ion implanted SiC-MESFET using a simulator and then fabricated a SiC-MESFET with the same doping profile as obtained from the simulation. The ion implanted SiC-MESFET operated successfully and had the same electrical characteristics as the epitaxial SiC-MESFET. We demonstrated the effectiveness of one-step implantation channel layer for the ion implanted SiC-MESFET.