Change in the electronic states of graphite overlayers depending on thickness.
Change in the electronic states of graphite overlayers depending on thickness.
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石墨覆盖层的电子态根据厚度而变化。
DOI：
10.1103/physrevb.50.4756
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发表时间：
1994
期刊：
影响因子：
--
通讯作者：
Otani
中科院分区：
文献类型：
--
作者：
Nagashima;Itoh;Ichinokawa;Oshima;Otani
利用扫描隧道显微镜和光电子能谱研究了在TaC（111）表面形成的石墨覆盖层的电子态。石墨薄膜在衬底上一层一层地生长。覆盖层的厚度被精确地调整为一层或两层单层。单层石墨薄膜的物理性能是通过界面上的化学键合来改变的。在第二层石墨层形成后，这种界面结合变得很弱，这使得双层石墨膜的性能与块状石墨相似。
Electronic states of graphite overlayers formed on the TaC (111) surface have been investigated with the use of scanning tunneling microscopy and photoelectron spectroscopy. The graphite film grows on the substrate layer by layer. The thickness of the overlayer has been adjusted precisely to be either one or two monolayers. The physical properties of the monolayer graphite film are modified by chemical bonding at the interface. This interfacial bonding becomes weak upon the formation of the second layer of graphite, which makes the properties of the double-layer graphite film similar to those of bulk graphite.