Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors
Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors
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矩形硅纳米线场效应晶体管中声子受限电子迁移率的横截面分布
DOI:
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发表时间:
2011
期刊:
影响因子:
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通讯作者:
H.Iwai
中科院分区:
文献类型:
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作者:
Y.Lee;K.Kakushima;K.Natori;H.Iwai