Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy
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DOI：
10.1063/1.2035332
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发表时间：
2005-08
影响因子：
4
通讯作者：
J. Noborisaka;J. Motohisa;S. Hara;Takashi Fukui
中科院分区：
文献类型：
--
作者：
J. Noborisaka;J. Motohisa;S. Hara;Takashi Fukui
我们采用选区金属有机气相外延技术制备了 GaAs∕AlGaAs 核壳纳米线。首先，在部分掩模的GaAs(111)B衬底上选择性生长GaAs纳米线；然后生长 AlGaAs 形成独立的异质结构纳米线。对纳米线直径作为 AlGaAs 生长时间函数的研究表明，AlGaAs 生长在 GaAs 纳米线的侧壁上，形成 GaAs∕AlGaAs 核壳结构。 GaAs 和 GaAs∕AlGaAs 核壳纳米线的显微光致发光测量揭示了 GaAs∕AlGaAs 核壳结构的光致发光强度的增强。基于这些核壳纳米线，通过各向异性干法刻蚀和湿法化学优先刻蚀形成AlGaAs纳米管，以确认核壳结构的形成并探索一类新型材料。
We fabricated GaAs∕AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs∕AlGaAs core-shell structures. Microphotoluminescence measurements of GaAs and GaAs∕AlGaAs core-shell nanowires reveal an enhancement of photoluminescence intensity in GaAs∕AlGaAs core-shell structures. Based on these core-shell nanowires, AlGaAs nanotubes were formed by using anisotropic dry etching and wet chemical preferential etching to confirm the formation of a core-shell structure and to explore a new class of materials.