EVIDENCE AGAINST SURFACE-STATE LIMITATIONS ON EFFICIENCY OF P-SI/CH3CN JUNCTIONS
EVIDENCE AGAINST SURFACE-STATE LIMITATIONS ON EFFICIENCY OF P-SI/CH3CN JUNCTIONS
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DOI：
10.1038/307533a0
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发表时间：
1984-01-01
期刊：
影响因子：
64.8
通讯作者：
LEWIS, NS
中科院分区：
文献类型：
--
作者：
LIEBER, CM;GRONET, CM;LEWIS, NS
我们在这里报告了第一个高效的p型硅基半导体-液体结系统。p型硅光电阴极在几种氧化还原系统下的开路光伏电压（Voc）为0.38-0.40 V 1 - 8。在CH3CN溶剂中对p-Si阴极进行的光电流-电压研究表明，使用theN，N ' -二甲基-4,4 ' -联吡啶2+/+氧化还原体系，632.8 nm光转化为电的效率为2.5%，使用其他大环配合物的效率为0.5-2.4% 7,8。小带隙半导体的这种适度的能量转换效率归因于固定半导体费米能级6 - 9并促进复合过程的表面态。然而，我们发现p型Si/CH3CN界面可以产生超过10%的太阳能转换效率，并且可以在理想结的理论极限0.08 V内显示开路光伏。
We report here the first efficient p-type Si-based semiconductor–liquid junction system. p-Type Si photocathodes have been previously reported to yield open circuit photovoltages,Voc, of 0.38–0.40 V with several redox systems1–8. Photocurrent–voltage studies of p-Si cathodes in CH3CN solvent have demonstrated 2.5% efficiency for conversion of 632.8-nm light to electricity with theN,N′-dimethyl-4,4′-bipyridinium2+/+redox system1, and 0.5–2.4% with other macrocyclic complexes7,8. Such modest energy conversion efficiencies for small band gap semiconductors have been attributed to surface states which pin the semiconductor Fermi level6–9and promote recombination processes10. However, we find that p-type Si/CH3CN interfaces can yield solar conversion efficiencies in excess of 10%, and can display open circuit photovoltages within 0.08 V of the theoretical limit for an ideal junction.