Small area Y-Ba-Cu-O thin films for applications in hot-electron bolometers
Small area Y-Ba-Cu-O thin films for applications in hot-electron bolometers
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DOI：
10.1109/77.919457
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发表时间：
2001-03
影响因子：
1.8
通讯作者：
L. Vale;R. Ono
中科院分区：
文献类型：
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作者：
L. Vale;R. Ono
我们正在研究在硅衬底上制备非常薄、面积很小的YBA/Sub2/Cu/Sub3/O/Sub7-x/(YBCO)薄膜，用于热电子测辐射热计。在工作温度较高的射电天文学和大气物理应用中，由高温/次C/材料制成的热电子测辐射热计将比低温材料更具优势。硅上的器件可以帮助推动这项技术在测辐射航天应用中的应用，在这些应用中，需要具有良好的热导和出色的红外性能的衬底。基于我们在YBCO测辐射热计和在硅上生长YBCO薄膜的经验，我们已经开始了对亚微米级器件的研究。对于厚度为45 nm的YBCO微桥，我们用脉冲激光沉积的典型YBCO薄膜的临界温度为86K，临界电流为1-3/spl次/10/sup 6/A/cm/sup 2/在77K。我们用厚度为25 nm到45 nm的YBCO薄膜制作了1-2/splµ/m宽的微桥。这些微桥的临界温度分别降低了71K到81K，这与产生微桥的工艺顺序有关。
We are investigating the use of very thin, small area YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) films on Si substrates for application in hot-electron bolometers. Hot-electron bolometers produced from high-T/sub c/ materials will be favored over their low-temperature counterparts in applications of radio astronomy and atmospheric physics where the higher operating temperatures provide distinct advantages. Devices on Si can help advance this technology for bolometric space applications, where a substrate is needed with good thermal conductance and excellent IR performance. Based on our experience with YBCO bolometers and YBCO film growth on Si, we have begun a study of sub-micrometer scale devices. Our typical YBCO films grown on Si by pulsed laser deposition have critical temperatures of 86 K and critical currents of 1-3/spl times/10/sup 6/ A/cm/sup 2/ at 77 K for YBCO microbridges 45 nm thick. We have made 1-2 /spl mu/m wide microbridges from YBCO films of 25 nm to 45 nm thick. These microbridges show reduced critical temperatures of 71 K to 81 K, respectively, related to the processing sequence that produces the microbridges.