Effect of F, Cl and Br doping on electrical properties of sprayed SnO2 films
Effect of F, Cl and Br doping on electrical properties of sprayed SnO2 films
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DOI：
10.1007/bf00275412
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
C. Agashe;S. Major
中科院分区：
文献类型：
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作者：
C. Agashe;S. Major
二氧化锡（SnO 2）薄膜作为透明导电涂层的性能非常高[1]。为了进一步改善其性能，这些膜掺杂有高价阳离子[2，3]或低价阴离子[4-7]。Sb和F掺杂的SnO_2薄膜已被详细研究，因为这些掺杂剂大大改善了这些薄膜的电光性能。由于所有卤素满足低价阴离子的基本要求，以改善SnO 2薄膜的性能，因此研究和比较它们作为这些薄膜中的掺杂剂的有效性被认为是有趣的。这也将揭示掺杂剂的离子尺寸和电负性在影响主体晶格的物理性质中的重要性。Abass等人研究了C1、Br和I掺杂对SnO 2薄膜的影响。[5-7]，主要强调光学性质。在此基础上，对卤素掺杂的SnO 2薄膜进行了详细的研究。目前的工作是其中的一部分，并关注F，C1和Br掺杂对SnO 2薄膜的电性能的影响。不包括碘掺杂，因为由于溶解度极限高于~ 80原子%，不能实现相同的掺杂范围（对于F、Cl、Br高达120原子%）。利用霍尔效应测量研究了薄膜的电子输运性质。采用喷雾热分解技术沉积了未掺杂和掺杂的SnO 2薄膜。使用0.17M SnCl 4溶液沉积未掺杂的膜。5 H20的去离子水和甲醇溶液（体积比1：9）。在425（_+ 5）C下在钠钙玻璃衬底上沉积薄膜。溶液流速为5.5 ml/min。其他工艺参数在其最佳值下保持不变[8]。使用相应的卤化铵掺入掺杂剂。掺杂水平“X/Sn”（X：F，Cl，Br）在前体溶液中以固定的步骤从0到120原子%变化。使用Shimadzu UV-160 A双光束分光光度计进行分光光度测量。通过使用货车der Pauw几何结构进行霍尔效应测量来确定电子输运性质[10]。
Thin films of tin dioxide (SnO2) rate very high in performance as a transparent conducting coating [1]. To improve their performance further, these films are doped with a higher valent cation [2, 3] or a lower valent anion [4-7]. Sb and F doped SnO2 films have been studied in detail because these dopants have improved the electro-optical properties of these films considerably. Since all halogens satisfy the basic requirement of lower valent anion to improve the performance of SnO2 films; it was considered interesting to study and compare their effectiveness as a dopant in these films. This will also reveal the importance of ionic size and electronegativity of dopant in affecting the physical properties of the host lattice. Effects of C1, Br and I doping in SnO2 films have been studied by Abass et al.[5-7], with major emphasis on optical properties. With this realization detailed studies on halogen doped SnO2 films were undertaken. The present work is part of this and is concerned with the effect of F, C1 and Br doping on electrical properties of SnO2 films. Iodine doping was not included because the same range of doping (for F, C1, Br up to 120 at%) could not be achieved owing to the solubility limits above-~ 80 at%. The electronic transport properties of the films were investigated using Hall effect measurements. Both undoped and doped SnO2 films were deposited by a spray pyrolysis technique. Undoped films were deposited using a 0.17 M solution of SnC14. 5H20 in deionized water and methanol (volume ratio 1: 9). Films were deposited on soda lime glass substrates at 425 (_+ 5) C. The solution flow rate was 5.5 ml/min. Other process parameters were constant at their optimum values [8]. Dopants were incorporated using corresponding ammonium halides. Doping level'X/Sn'(X: F, C1, Br) in precursor solution was varied from zero to 120 at% in fixed steps.Film thickness was calculated from interference pattern observed in the visible region of'transmission versus wavelength'curves [9]. Spectrophotometric measurements were done using a Shimadzu UV-160A double beam spectrophotometer. Electronic transport properties were determined by performing Hall effect measurements using van der Pauw geometry [10].