Defect morphology and strain of CVD grown 3C–SiC layers: effect of the carbonization process
Defect morphology and strain of CVD grown 3C–SiC layers: effect of the carbonization process
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CVD 生长的 3C-SiC 层的缺陷形貌和应变：碳化过程的影响
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
Y. Monteil
中科院分区：
文献类型：
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作者：
D. Méndez;A. Aouni;F. M. Morales;F. J. Pacheco;D. Araújo;É. Bustarret;G. Ferro;Y. Monteil
立方碳化硅/硅形成的异质结构（3C-SiC /Si）作为立方III‐N生长和SiC器件的衬底非常有前途。在SiC外延生长之前，优化了Si衬底碳化工艺，提高了层的质量。采用透射电子显微镜对化学气相沉积法在两种不同碳化程度的基底上生长的SiC层进行了拉伸和压缩应变状态下的缺陷形貌和应变分析。在这种异质外延系统中观察到错配位错、堆叠故障和反相畴。无论使用何种衬底，Si和SiC之间的外延关系都很好。然而，镶嵌结构的晶粒取向偏差和过度生长层的应变很大程度上取决于硅衬底的碳化条件。（©2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim）
The heterostructure formed by cubic silicon carbide/silicon (3C–SiC/Si) is very promising as substrate for cubic III‐N growth and for SiC devices. Optimized Si substrate carbonization process before the epitaxial growth of SiC, leads to a higher quality of the layer. In this paper, transmission electron microscopy is used to analyze the defect morphology and strain of SiC layers grown by chemical vapor deposition on two differently carbonized substrates, with tensile and compressive strain state. Misfit dislocations, stack‐ ing faults and antiphase domains are observed in this heteroepitaxial system. Irrespective of the substrate used, the epitaxial relationship between Si and SiC is good. However, the grain misorientation of the mosaic structure and the strain of the overgrowth layer depend drastically on the carbonization conditions of the silicon substrate. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)