Room Temperature Coherent Spin Alignment of Silicon Vacancies in 4H- and 6H-SiC
Room Temperature Coherent Spin Alignment of Silicon Vacancies in 4H- and 6H-SiC
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DOI：
10.1103/physrevlett.108.226402
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发表时间：
2012-05-29
影响因子：
8.6
通讯作者：
Proskuryakov, Ivan I.
中科院分区：
文献类型：
--
作者：
Soltamov, Victor A.;Soltamova, Alexandra A.;Proskuryakov, Ivan I.
报道了在室温下实现碳化硅中硅空位（V-Si）基态自旋子能级的光诱导反转布居。结果表明，探测的硅空位自旋系综可以在自旋态的相干叠加中制备。拉比章动持续超过80亩。两个相反的方案的光学对准之间的基态自旋子级的硅空位照射与非偏振光的人口实现在4 H-和6 H-SiC在室温下。这些共同使得SiC中的硅空位成为自旋电子学、量子信息处理和磁力测量的非常有利的缺陷。
We report the realization of the optically induced inverse population of the ground-state spin sublevels of the silicon vacancies (V-Si) in silicon carbide (SiC) at room temperature. The data show that the probed silicon vacancy spin ensemble can be prepared in a coherent superposition of the spin states. Rabi nutations persist for more than 80 mu s. Two opposite schemes of the optical alignment of the populations between the ground-state spin sublevels of the silicon vacancy upon illumination with unpolarized light are realized in 4H- and 6H-SiC at room temperature. These altogether make the silicon vacancy in SiC a very favorable defect for spintronics, quantum information processing, and magnetometry.