Thermal and electrical transport properties of VA-element doped Pb9.6M0.2Te10−xSex (M = Sb, Bi) thermoelectric materials
Thermal and electrical transport properties of VA-element doped Pb9.6M0.2Te10−xSex (M = Sb, Bi) thermoelectric materials
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DOI：
10.1088/0022-3727/43/3/035405
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发表时间：
2010-01
期刊：
影响因子：
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通讯作者：
Y. Chen;T. Zhu;S. H. Yang;C. Yu;X. Zhao
中科院分区：
文献类型：
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作者：
Y. Chen;T. Zhu;S. H. Yang;C. Yu;X. Zhao
合成了VA掺杂的Pb9.6M0.2Te10−xSex(M=Sb，Bi，x=6，7，8)合金，并对其热电性能进行了系统的研究。Sb和Bi掺杂样品的功率因数分别达到∼1.4mW m−1 K−2和0.8~1.0 mW m−1 K−2，而导热系数随着温度的升高而降低到0.75W m−1 K−1和0.8W m−1 K−1。由于Sb掺杂样品具有较低的热导率，其ZT达到了最高值∼1.0 5，表明VA元素是除经典掺杂碘之外的另一种有效掺杂。结果表明，VA元素的引入有利于改善PbTe基材料的热膨胀性能。
The VA-element doped Pb9.6M0.2Te10−xSex (M = Sb, Bi, x = 6, 7, 8) alloys have been synthesized and their thermoelectric (TE) properties were systematically investigated. The power factors of Sb- and Bi-doped samples reached ∼1.4 mW m−1 K−2 and 0.8–1.0 mW m−1 K−2, respectively, while the thermal conductivities decreased to 0.75 W m−1 K−1 and 0.8 W m−1 K−1 as the temperature was increased to 700 K. Due to the rather low thermal conductivity, a highest ZT of ∼1.05 has been attained for the Sb-doped sample, indicating that the VA element is another effective dopant besides the classical dopant iodine. The results show that the introduction of VA element is beneficial to improve TE performance of PbTe-based materials.