Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures
Influence of high-index GaAs substrates on the growth of highly strained (InGa)As/GaAs heterostructures
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DOI：
10.1016/s0022-0248(98)01339-6
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发表时间：
1999-05-01
影响因子：
1.8
通讯作者：
Guzzi, M
中科院分区：
文献类型：
--
作者：
Polimeni, A;Patanè, A;Guzzi, M
通过改变In浓度和（100）和（311）B取向的（InGa）As层厚度，系统地研究了InxGa 1-xAs/GaAs异质结构中自组装量子点的光学和微观性质.光致发光光谱表明，对于中等（x = 0.5）和高（x = 1.0）晶格失配，（InGa）As相对于（100）衬底在高折射率衬底上的点形成被延迟。原子力显微镜显示，一贯更小，更平坦的点上获得高指数的飞机，突出了基板形态上的点自聚集过程中发挥的重要作用。(C)1999 Elsevier Science B. V.保留所有权利。
A systematic study of the optical and microscopic properties of self-assembled quantum dots in InxGa1-xAs/GaAs heterostructures has been carried out by varying the In concentration and the (InGa)As layer thickness on both(1 0 0) and (3 1 1)B orientations. Photoluminescence spectroscopy indicates that the dot formation on high-index substrates is delayed at larger amount of (InGa)As with respect to (1 0 0) substrates for both moderate (x = 0.5) and high (x = 1.0) lattice mismatch. Atomic force microscopy shows that consistently smaller and flatter dots are obtained on high-index planes, highlighting the important role played by substrate morphology on the dot self-aggregation process. (C) 1999 Elsevier Science B.V. All rights reserved.