Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction
Large Tunnel Magnetoresistance of 1056% at Room Temperature in MgO Based Double Barrier Magnetic Tunnel Junction
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DOI：
10.1143/apex.2.083002
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发表时间：
2009-07
影响因子：
2.3
通讯作者：
Lixian Jiang;H. Naganuma;M. Oogane;Y. Ando
中科院分区：
文献类型：
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作者：
Lixian Jiang;H. Naganuma;M. Oogane;Y. Ando
采用射频磁控溅射技术在SiO2/Si（001）衬底上制备了具有薄中间层的CoFeB/MgO/CoFeB/MgO/CoFeB双势垒磁性隧道结（DBMTJ）。磁控溅射我们成功地在具有1.2 nm的中间CoFeB层厚度的DBMTJ中在室温下获得了1056%的大隧道磁阻，该DBMTJ在350 °C的相对低的沉积后退火温度下制造。该DBMTJ还实现了自由中间CoFeB层中的急剧磁化切换，这归因于外部CoFeB和PtMn层之间的强反铁磁耦合。这些有利的磁阻特性为发展实际的自旋电子学应用和高尚的磁输运物理提供了有趣的可能性。
CoFeB/MgO/CoFeB/MgO/CoFeB double barrier magnetic tunnel junctions (DBMTJs) with thin middle layers were fabricated on SiO2/Si(001) substrates by r.f. magnetron sputtering. We successfully obtained a large tunnel magnetoresistance of 1056% at room temperature in a DBMTJ with a middle CoFeB layer thickness of 1.2 nm that was fabricated at a relatively low post-deposition annealing temperature of 350 °C. This DBMTJ also realized sharp magnetization switching in the free middle CoFeB layer, which is attributed to strong antiferromagnetic coupling between the exterior CoFeB and PtMn layers. These favorable magnetoresistive properties offer interesting possibilities for developing practical spintronics applications and noble magnetotransport physics.