Superconductivity in thallium double atomic layer and transition into an insulating phase intermediated by a quantum metal state
Superconductivity in thallium double atomic layer and transition into an insulating phase intermediated by a quantum metal state
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DOI：
10.1088/2053-1583/aa57f9
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发表时间：
2017-06-01
期刊：
影响因子：
5.5
通讯作者：
Hasegawa, S.
中科院分区：
文献类型：
--
作者：
Ichinokura, S.;Bondarenko, L. V.;Hasegawa, S.
本文报道了用原位电阻率测量方法在真空中首次观察到的Si（111）上的Tl双原子层的超导电性。的TI双层的结构，其特征在于由一组技术，包括扫描隧道显微镜，电子衍射和光电子能谱，这证实了亚稳态和金属性质的TI双层。在衬底的整个表面上外延生长原子级薄的“软”金属膜使我们能够在0.96 K下发现宏观超导转变，伴随着序参数的热和量子涨落。该系统还演示了一个连续的磁场诱导的超导体-绝缘体转变，以及一个中间金属状态。我们发现，在最低温度下的磁电阻率是符合玻色金属图片，这是一个强量子涨落的结果。
We report on the first observation of superconductivity in a double atomic layer of Tl on Si(1 1 1) using in situ electrical resistivity measurements in ultrahigh vacuum. The structure of the Tl bilayer was characterized by a set of techniques, including scanning tunneling microscopy, electron diffraction and photoemission spectroscopy, which confirmed the metastability and metallic nature of the Tl bilayer. The epitaxial growth of atomically thin 'soft' metallic film over the entire surface of substrate enabled us to find a macroscopic superconducting transition at 0.96 K, accompanied by thermal and quantum fluctuations of order parameter. The system also demonstrates a perpendicular-magnetic-field-induced superconductor-insulator transition, together with an intermediate metallic state. We have found that the magnetoresitivity at the lowest temperature is consistent with the Bose metal picture, which is a consequence of strong quantum fluctuations.