Raman scattering in polycrystalline 3 C − SiC : Influence of stacking faults
Raman scattering in polycrystalline 3 C − SiC : Influence of stacking faults
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DOI：
10.1103/physrevb.58.9858
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发表时间：
1998-10
影响因子：
3.7
通讯作者：
S. Rohmfeld;M. Hundhausen;L. Ley
中科院分区：
文献类型：
--
作者：
S. Rohmfeld;M. Hundhausen;L. Ley
我们报告的拉曼光谱的微晶$3C\ensuremath{-}\mathrm{SiC}$自支撑膜的温度相关的测量。测量是在温度高达1700 K的薄膜的直接激光加热下进行的。TO-和LO-声子频率的温度依赖性与单晶3C\ensuremath {-}\mathrm{SiC}的温度依赖性一致，但拉曼谱线要宽得多。我们讨论了堆垛层错对线宽的影响，通过比较我们的结果与计算机模拟的拉曼强度分布的$3C\ensuremath{-}\mathrm{SiC}$结构具有随机分布的堆垛层错。当平均层错距离为6AA时，线宽和无序引起的峰位移有很好的一致性.我们观察到拉曼线在1900 K以上的温度下不可逆地变窄，我们将其归因于3C\ensuremath {-}\mathrm{SiC}中堆垛层错的退火。
We report temperature dependent measurements of the Raman spectra of microcrystalline $3C\ensuremath{-}\mathrm{SiC}$ free-standing films. The measurements were performed under direct laser heating of the thin films for temperatures up to 1700 K. The temperature dependence of the TO- and LO-phonon frequencies agrees well with that of single-crystal $3C\ensuremath{-}\mathrm{SiC},$ but the Raman lines are considerably broader. We discuss the influence of stacking faults on the linewidth by comparing our results with computer simulated Raman intensity profiles of $3C\ensuremath{-}\mathrm{SiC}$ structures having randomly distributed stacking faults. Good agreement with respect to the linewidth and disorder-induced peak shift is found if the average stacking fault distance is assumed to be 6 \AA{}. We observe an irreversible narrowing of the Raman lines at temperatures above 1900 K, which we ascribe to an annealing of stacking faults in $3C\ensuremath{-}\mathrm{SiC}.$