X-ray photoelectron characterization of 6H-SiC(0001)
X-ray photoelectron characterization of 6H-SiC(0001)
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6H-SiC(0001)的X射线光电子表征
DOI：
10.1103/physrevb.60.11653
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发表时间：
1999
影响因子：
3.7
通讯作者：
L. Kubler
中科院分区：
文献类型：
--
作者：
Laurent Simon;J. Bischoff;L. Kubler
对三种不同的重建表面进行了X射线光电子能谱和光电子衍射测量：一个富硅表面，一个富硅表面，两个富碳$\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$和$6\sqrt{3}\ifmmode\times\else\texttimes\fi{}6\sqrt{3}R30\ifmmode^\CIRC\Else\TextDegree\FI{}$重建曲面。在每种情况下，都显示了{C}1s和{Si}2p的核能级谱线，并与理想未重构表面的二次散射计算进行了比较。实验中的{C}1S和{Si}2P体组分XPD图没有随着表面重构的变化而有显著差异。这些实验的XPD图形与未重建模型的模拟非常吻合。对于高度富C的$6\sqrt{3}\ifmmode\times\else\texttimes\fi{}6\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$重建表面，给出了核心线的不同去卷积分量的XPD图样。实验的表面组分XPD图与计算的一致性允许我们提出一个基于可公度石墨顶层覆盖的{T}_{4}}位的硅原子的重构模型。
X-ray photoelectron spectroscopy and photoelectron-diffraction (XPD) measurements are performed on $6H\ensuremath{-}\mathrm{SiC}(0001)$ for three different reconstructed surfaces: one Si-rich $3\ifmmode\times\else\texttimes\fi{}3$ and two C-rich $\sqrt{3}\ifmmode\times\else\texttimes\fi{}\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$ and $6\sqrt{3}\ifmmode\times\else\texttimes\fi{}6\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$ reconstructed surfaces. In each case, the $\mathrm{C}1s$ and $\mathrm{Si}2p$ core-level lines are shown and XPD patterns are compared with double-scattering calculations of an ideal unreconstructed surface. No significant differences have been observed in the experimental $\mathrm{C}1s$ and $\mathrm{Si}2p$ bulk component XPD patterns with the changes of the surface reconstruction. These experimental XPD patterns fit the simulations of an unreconstructed model fairly well. For the highly C-rich $6\sqrt{3}\ifmmode\times\else\texttimes\fi{}6\sqrt{3}R30\ifmmode^\circ\else\textdegree\fi{}$ reconstructed surface, XPD patterns of the different deconvoluted components of the $\mathrm{C}1s$ core line are presented. An agreement between the experimental $\mathrm{C}1s$ surface component XPD diagram and calculations allows us to propose a model for this reconstruction based on Si adatoms at ${T}_{4}$ sites covered by a commensurable graphite top layer.