In/Pt ohmic contacts to GaAs
In/Pt ohmic contacts to GaAs
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In/Pt 与 GaAs 欧姆接触
DOI：
10.1063/1.335899
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发表时间：
1985
影响因子：
3.2
通讯作者：
M. Leung
中科院分区：
文献类型：
--
作者：
D. Marvin;N. Ives;M. Leung
制备了具有良好电性能和机械性能的梯度异质结InGaAs欧姆接触。改进的原因是在In层和衬底之间使用了一层薄的铂层，它控制了In和GaAs的反应。还提供了InAs异质结区是外延的证据。
Graded heterojunction InGaAs ohmic contacts to GaAs have been prepared which show improved electrical and mechanical properties. The improvements result from the use of a thin Pt layer between the In layer and the substrate which controls the reaction of the In and the GaAs. Evidence is also offered that the InAs heterojunction regions are epitaxial.