Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
Transient Simulation of Microwave SiC MESFETs With Improved Trap Models
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DOI：
10.1109/ted.2009.2039679
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发表时间：
2010-02
影响因子：
3.1
通讯作者：
H. Hjelmgren;F. Allerstam;K. Andersson;P. Nilsson;N. Rorsman
中科院分区：
文献类型：
--
作者：
H. Hjelmgren;F. Allerstam;K. Andersson;P. Nilsson;N. Rorsman
对SiC金属半导体场效应晶体管的瞬态特性进行了测量和模拟。在模拟中考虑了自加热、栅极隧穿、衬底和表面陷阱。在夹断过程中，通过明确填充栅极附近的表面陷阱，实现了模拟和测量栅极滞后之间的密切对应。
Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.