Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride
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DOI：
10.1063/1.3662043
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发表时间：
2011-12-12
影响因子：
4
通讯作者：
Hone, James
中科院分区：
文献类型：
--
作者：
Lee, Gwan-Hyoung;Yu, Young-Jun;Hone, James
用导电原子力显微镜研究了电子在金包覆云母表面的平面和六方氮化硼（h-BN）中的隧穿。在单层、双层和三层h-BN中观察到低偏压直接隧穿。对于所有的厚度，Fowler-Nordheim隧穿（FNT）发生在高偏压，击穿电压随厚度的增加。基于FNT模型，获得了h-BN的隧穿势垒高度（3.07 eV）和介电强度（7.94 MV/cm）;这些值与SiO2的值相当。(C)2011年美国物理学会。[doi：10.1063/1.3662043]
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride (h-BN) on gold-coated mica was investigated using conductive atomic force microscopy. Low-bias direct tunneling was observed in mono-, bi-, and tri-layer h-BN. For all thicknesses, Fowler-Nordheim tunneling (FNT) occurred at high bias, showing an increase of breakdown voltage with thickness. Based on the FNT model, the barrier height for tunneling (3.07 eV) and dielectric strength (7.94 MV/cm) of h-BN are obtained; these values are comparable to those of SiO2. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3662043]