Characterization of the surface states of Co(0001), Co(111), and ultrathin films of Co on Cu(111)
Characterization of the surface states of Co(0001), Co(111), and ultrathin films of Co on Cu(111)
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Co(0001)、Co(111) 和 Cu(111) 上 Co 超薄膜的表面态表征
DOI：
10.1103/physrevb.72.125433
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发表时间：
2005
影响因子：
3.7
通讯作者：
A. Llois
中科院分区：
文献类型：
--
作者：
M. A. Barral;M. Weissmann;A. Llois
用参数化紧束缚哈密顿量研究了Co(0001)，Co(111)和$2/{Co}/{Cu}(111)的表面电子结构.我们将计算得到的近表面真空区的局域态密度与用扫描隧道显微镜(STM)得到的微分电导dI/dv进行了比较。我们对能带结构进行了详细的分析，以解决近年来引起争议的在Co表面和在Cu(111)上沉积的Co薄膜上观察到的光谱和STM特征的来源和性质。
The surface electronic structure of Co(0001), Co(111), and $2\mathrm{Co}∕\mathrm{Cu}(111)$ is studied using a parametrized tight-binding Hamiltonian with $s$, $p$, and $d$ orbitals in the basis. We compare the calculated local density of states in the vacuum region near the surface with the differential conductance $dI∕dV$ obtained with scanning tunneling microscopy (STM). We make a detailed analysis of the band structure in order to settle the origin and nature of spectroscopic and STM features observed on Co surfaces as well as on Co thin films deposited on Cu(111), which have given rise to controversy in recent years.