PHOTON-ASSISTED ELECTRIC-FIELD DOMAINS AND MULTIPHOTON-ASSISTED TUNNELING IN SEMICONDUCTOR SUPERLATTICES
PHOTON-ASSISTED ELECTRIC-FIELD DOMAINS AND MULTIPHOTON-ASSISTED TUNNELING IN SEMICONDUCTOR SUPERLATTICES
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DOI：
10.1103/physrevlett.75.4098
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发表时间：
1995-11-27
影响因子：
8.6
通讯作者：
RODWELL, MJW
中科院分区：
文献类型：
--
作者：
KEAY, BJ;ALLEN, SJ;RODWELL, MJW
我们报告了光子辅助隧道感应电场域、太赫兹多光子辅助隧道以及半导体超晶格中光子感应电流对太赫兹电场强度的振荡依赖性的首次观察。电流-电压（I-V）特性以及电流对太赫兹电场强度的依赖性的新结构与超晶格中的电流和电场分布模型相比，在超晶格中新的虚态起到与未受扰动的量子阱态类似的作用。
We report the first observation of photon-assisted tunneling induced electric field domains, terahertz multiphoton-assisted tunneling, and an oscillatory dependence of the photon induced currents on terahertz electric field strength in semiconductor superlattices. The new structure in the current-voltage (I-V) characteristics-as well as the dependence of the current on terahertz electric field strength compares favorably with a model for the current and electrical field profile in superlattices in which new virtual states serve a role similar to the unperturbed quantum well states.