Oxide roughness effect on tunneling current of MOS diodes
Oxide roughness effect on tunneling current of MOS diodes
复制标题
氧化物粗糙度对MOS二极管隧道电流的影响
DOI：
10.1109/ted.2002.805229
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发表时间：
2002
影响因子：
3.1
通讯作者：
Cheewee Liu
中科院分区：
文献类型：
--
作者：
B. Hsu;Kung;Chiu;Sheng;Cheewee Liu
采用二维器件模拟方法研究了不同氧化层粗糙度的金属超薄氧化层硅隧穿二极管的隧穿电流。利用氧化层的共形性质，模拟了不同氧化层粗糙度下直接隧穿和Fowler-Nordheim（FN）隧穿的隧穿电流密度。结果表明，氧化层粗糙度显著提高了隧穿电流密度，这种隧穿电流密度的增加是由于二维电学效应引起的。此外，一组控制氧化层粗糙度的器件被制作来验证模拟结果，我们的模型定性地与实验结果一致。
Two-dimensional (2-D) device simulation is used to investigate the tunneling current of metal ultra-thin-oxide silicon tunneling diodes with different oxide roughness. With the conformal nature of ultrathin oxide, the tunneling current density is simulated in both direct tunneling and Fowler-Nordheim (FN) tunneling regimes with different oxide roughness. The results show that oxide roughness dramatically enhances the tunneling current density and the 2-D electrical effect is responsible for this increment of tunneling current density. Furthermore, a set of devices with controlled oxide roughness is fabricated to verify the simulation results and our model qualitatively agrees with the experiment results.