8 μm luminescence from a Tb3+ GaGeSbSe fiber.
8 μm luminescence from a Tb3+ GaGeSbSe fiber.
复制标题
Tb3+ GaGeSbSe 光纤发出的 8 μm 发光。
作者：
F. Starecki;N. Abdellaoui;A. Braud;J. Doualan;C. Boussard;B. Bureau;P. Camy;V. Nazabal
在这封信中，据我们所知，我们首次报告了掺杂浓度为 1000 ppm 和 500 ppm 的 Tb3+ 掺杂 Ga5Ge20Sb10Se65 硫族化物光纤在 8 μm 处的发射情况。这些光纤按照传统的熔体淬火方法拉制而成，并使用 Tm3+: YAG 激光器以 2.05 μm 泵浦。研究了发射 F47 流形的光谱特性，以排除任何模仿真实 Tb3+ 8 µm 发射的寄生信号。时间分辨光谱实验旨在对这种以清晰的信噪比记录的 8 μm 荧光进行全面研究。
In this Letter, we report for the first time, to the best of our knowledge, on an emission at 8 μm from Tb3+-doped Ga5Ge20Sb10Se65 chalcogenide fibers with doping levels at 1000 ppm and 500 ppm. These fibers were drawn following conventional melt-quenching methods and pumped at 2.05 μm using a Tm3+: YAG laser. The spectroscopic properties of the emitting F47 manifold are investigated to rule out any parasitic signal mimicking the real Tb3+ 8 μm emission. Time-resolved spectroscopic experiments are presented to build a comprehensive study of this 8 μm fluorescence recorded with a clear signal-to-noise ratio.