50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS
50-NM SELF-ALIGNED-GATE PSEUDOMORPHIC ALINAS GAINAS HIGH ELECTRON-MOBILITY TRANSISTORS
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DOI：
10.1109/16.155871
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发表时间：
1992-09-01
影响因子：
3.1
通讯作者：
JELLOIAN, LM
中科院分区：
文献类型：
--
作者：
NGUYEN, LD;BROWN, AS;JELLOIAN, LM
我们报告的设计和制造的一类新的50纳米自对准栅赝晶AlInAs/GaInAs高电子迁移率晶体管（HEMT）的超高频和超低噪声应用的潜力。这些设备表现出1740 mS/mm的非本征介电常数和340 GHz的非本征电流增益截止频率在室温下，后者是迄今为止报道的任何三热半导体器件的最高值。我们还报告了第一次详细比较的小信号特性的赝晶和晶格匹配的AlInAs/GaInAs HEMT具有相似的栅极长度（50 nm）和栅极到沟道的间隔（17.5 nm）：前者表现出16%的高的介电常数和15%的高电流增益截止频率，但表现出38%的输出电导差。最后，我们对超短栅长AlInAs/GaInAs HEMT的高场输运特性进行了分析。该分析表明，栅极长度从150 nm减小到50 nm既不会提高也不会降低它们的平均速度。相比之下，添加53%至80%的铟将该参数提高了19%，从约2.6至3.1 × 10（7）cm/s。
We report on the design and fabrication of a new class of 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs High Electron Mobility Transistors (HEMT's) with potential for ultra-high-frequency and ultra-low-noise applications. These devices exhibit an extrinsic transconductance of 1740 mS/mm and an extrinsic current-gain cutoff frequency of 340 GHz at room temperature; the latter is the highest value yet reported for any three-thermal semiconductor device. We also report for the first time a detailed comparison of the small-signal characteristics of a pseudomorphic and a lattice-matched AlInAs/GaInAs HEMT with similar gate length (50 nm) and gate-to-channel separation (17.5 nm): the former demonstrates a 16% higher transconductance and a 15% higher current-gain cutoff frequency, but exhibits a 38% poorer output conductance. Finally, we offer an analysis on the high-field transport properties of ultra-short gate-length AlInAs/GaInAs HEMT's. This analysis shows that a reduction of gate length from 150 to 50 nm neither enhances nor reduces their average velocity. In contrast, the addition of indium from 53% to 80% improves this parameter by 19%, from approximately 2.6 to 3.1 x 10(7) cm/s.