X-ray imaging plate using CsBr:Eu phosphors for computed radiography
X-ray imaging plate using CsBr:Eu phosphors for computed radiography
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使用 CsBr:Eu 荧光粉进行计算机放射成像的 X 射线成像板
DOI：
10.1016/j.nima.2007.05.155
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发表时间：
2007
影响因子：
1.4
通讯作者：
S. Kasai
中科院分区：
文献类型：
--
作者：
H. Nanto;A. Nishimura;M. Kuroda;Y. Takei;Y. Nakano;T. Shoji;T. Yanagita;S. Kasai
结果表明，在X射线辐照下，掺Eu的CsBr（CsBr：Eu）具有较强的光致发光（PSL）。CsBr：Eu荧光陶瓷样品的PSL发射和激发光谱的峰值波长分别为450和690nm。研究了制备条件如Eu浓度、烧结温度和烧结时间对PSL性能的影响。结果表明，在最佳制备条件下制备的CsBr：Eu荧光陶瓷的光致发光强度高于BaFBr：Eu和BaFI：Eu的成像板（IP）。使用CsBr：Eu磷光体膜的IP的图像质量优于市售IP的图像质量。
It is shown that X-ray-irradiated Eu-doped CsBr (CsBr:Eu) exhibits intense photostimulated luminescence (PSL). The peak wavelengths of PSL emission and stimulation spectra of CsBr:Eu phosphor ceramic samples are 450 and 690nm, respectively. The dependence of PSL properties on preparing conditions of phosphor ceramic samples, such as Eu concentration, sintering temperature and sintering time, is studied. It is found that the PSL intensity of CsBr:Eu phosphor ceramics fabricated under optimum preparation condition is higher than that of commercially available imaging plates (IP) using BaFBr:Eu and BaFI:Eu. The image quality of the IP using CsBr:Eu phosphor film is better than that of commercially available IP.