Thermoelectric effect of silicon films prepared by aluminum-induced crystallization
Thermoelectric effect of silicon films prepared by aluminum-induced crystallization
复制标题
铝诱导晶化硅薄膜的热电效应
DOI：
10.1007/s12613-012-0654-7
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发表时间：
2012-10
影响因子：
4.8
通讯作者：
Y. J. HE
中科院分区：
文献类型：
--
作者：
Q. R. HOU;B. F. GU;Y. B. CHE;Y. J. HE
采用磁控溅射法在玻璃衬底上制备了铝诱导晶化硅薄膜。通过铝靶的规则脉冲溅射，在硅膜中间歇地添加铝。通过调整铝溅射功率和未掺杂硅层的溅射时间，可以控制硅膜中铝的量，从而可以调整多晶硅膜的塞贝克系数和电阻率。结果表明，当铝硅溅射功率比为16%时，薄膜的Seebeck系数和电阻率均随铝含量的增加而减小，其Seebeck系数和室温电阻率分别为0.185-0.285 mV/K和0.30-2.4 ω·cm。当溅射功率比降低到7%时，Seebeck系数变化不大，但电阻率仍随Al含量的增加而降低，Seebeck系数为0.219-0.263 mV/K，室温电阻率为0.26-0.80 ω·cm。
Aluminum-induced crystallized silicon films were prepared on glass substrates by magnetron sputtering. Aluminum was added in the silicon films intermittently by the regular pulse sputtering of an aluminum target. The amount of aluminum in the silicon films can be controlled by regulating the aluminum sputtering power and the sputtering time of the undoped silicon layer; thus, the Seebeck coefficient and electrical resistivity of the polycrystalline silicon films can be adjusted. It is found that, when the sputtering power ratio of aluminum to silicon is 16%, both the Seebeck coefficient and the electrical resistivity decrease with the increasing amount of aluminum as expected; the Seebeck coefficient and the electrical resistivity at room temperature are 0.185–0.285 mV/K and 0.30–2.4 ω·cm, respectively. By reducing the sputtering power ratio to 7%, however, the Seebeck coefficient does not change much, though the electrical resistivity still decreases with the amount of aluminum increasing; the Seebeck coefficient and electrical resistivity at room temperature are 0.219–0.263 mV/K and 0.26–0.80 ω·cm, respectively.
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影响因子：
64.8
作者：
O. H. Hughes
通讯作者：
O. H. Hughes
影响因子：
2.1
作者：
D. Dimova‐Malinovska;O. Angelov;M. Sendova-Vassileva;M. Kamenova;J. Pivin
通讯作者：
D. Dimova‐Malinovska;O. Angelov;M. Sendova-Vassileva;M. Kamenova;J. Pivin
DOI：
10.1002/chin.200814011
发表时间：
2008-04
期刊：
ChemInform
影响因子：
--
作者：
A. Hochbaum;Renkun Chen;R. Delgado;W. Liang;E. Garnett;M. Najarian;A. Majumdar;P. Yang
通讯作者：
A. Hochbaum;Renkun Chen;R. Delgado;W. Liang;E. Garnett;M. Najarian;A. Majumdar;P. Yang
DOI：
--
发表时间：
2008-03
期刊：
Bulletin of the American Physical Society
影响因子：
--
作者：
A. Hochbaum;Renkun Chen;R. Delgado;W. Liang;E. Garnett;M. Najarian;A. Majumdar;P. Yang
通讯作者：
A. Hochbaum;Renkun Chen;R. Delgado;W. Liang;E. Garnett;M. Najarian;A. Majumdar;P. Yang
影响因子：
64.8
作者：
Hochbaum, Allon I.;Chen, Renkun;Yang, Peidong
通讯作者：
Yang, Peidong