Epitaxial growth of poly(dimethylsilane) evaporated films on poly(tetrafluoroethylene) layer
Epitaxial growth of poly(dimethylsilane) evaporated films on poly(tetrafluoroethylene) layer
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聚四氟乙烯层上聚二甲基硅烷蒸镀膜的外延生长
DOI：
10.1143/jjap.36.819
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
T. Fujiki
中科院分区：
文献类型：
--
作者：
R. Hattori;Y. Aoki;T. Sugano;J. Shirafuji;T. Fujiki
用蒸发法在高取向聚二甲基硅烷（PTFE）薄膜上外延生长了聚二甲基硅烷（PDMS）薄膜。利用原子力显微镜、偏光显微镜图像、X射线衍射图和偏振吸收光谱对PDMS薄膜的取向特性进行了研究。取向区域沿着在PTFE层上形成的凹槽（1-5 μm宽）。X-射线衍射和偏振吸收光谱表明，晶体结构的（110）面平行于基底表面，Si主链的c轴平行于PTFE涂层基底上的沟槽。
Epitaxially grown poly(dimethylsilane) (PDMS) films have been prepared by evaporation on a highly-oriented poly(tetrafluoroethylene) (PTFE) layer which is formed by means of a mechanical deposition technique. The orientation characteristics of PDMS films are determined using atomic force microscopy, polarizing microscope images, X-ray diffraction patterns and polarized absorption spectra. The oriented regions lie along the grooves (1–5 µm wide) formed on the PTFE layer. The X-ray diffraction patterns and the polarized absorption spectra indicate that the (110) plane of the crystal structure is parallel to the substrate surface and that the c-axis of the Si-backbone chain is parallel to the grooves on the PTFE-coated substrate.