Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE
Epitaxy of Gallium Nitride by HVPE Using Low Temperature Intermediate Buffer Layers Deposited by MOVPE
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使用 MOVPE 沉积的低温中间缓冲层通过 HVPE 外延生长氮化镓
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
M. Ilegems
中科院分区：
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作者：
V. Wagner;O. Parillaud;H. Bühlmann;M. Ilegems
我们研究了使用在低温 (LT) 下预沉积的不同 GaN 和 AlN 缓冲层通过氢化物气相外延 (HVPE) 生长厚 GaN 层。与直接在蓝宝石上生长的层相比，通过金属有机气相外延 (MOVPE) 生长的 LT 缓冲层上获得的层表现出优异的均匀性、良好的晶体质量（X 射线衍射 (XRD) 半高全宽 (FWHM) 值约为 650 角秒），并且表面形态（通过光学显微镜和原子力显微镜测量表征）显着改善。用氢气部分替代载气氮气可以进一步改善表面形貌和晶体质量，达到 350 弧秒的最佳 XRD FWHM 值。相比之下，使用原位生长的非晶 LT-HVPE 缓冲层的实验显示出相当差的结果。
We investigated the use of different GaN and AlN buffer layers pre-deposited at low temperature (LT) for the growth of thick GaN layers by Hydride Vapor Phase Epitaxy (HVPE). The layers obtained on LT buffer layers grown by Metal-Organic Vapor Phase Epitaxy (MOVPE) show an excellent homogeneity, good crystalline quality (X-Ray Diffraction (XRD) Full Width at Half Maximum (FWHM) values around 650 arcsec) and the surface morphology (characterized by optical microscopy and atomic force microscopy measurements) is significantly improved compared to layers grown directly on sapphire. The partial replacement of the carrier gas nitrogen by hydrogen leads to a further improvement of the surface morphology and crystalline quality, reaching best XRD FWHM values of 350 arcsec. In contrast, experiments using an amorphous LT-HVPE buffer layer grown in situ show rather poor results.