Preparation of wide gap and low resistive hetero-structured SiCX films as wide gap window of solar cells
Preparation of wide gap and low resistive hetero-structured SiCX films as wide gap window of solar cells
复制标题
宽间隙低阻异质结构SiCX薄膜的制备作为宽间隙太阳能电池窗口
DOI：
10.1016/j.jnoncrysol.2004.02.035
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发表时间：
2004
影响因子：
3.5
通讯作者：
S. Nonomura
中科院分区：
文献类型：
--
作者：
T. Itoh;Y. Hasegawa;T. Fujiwara;A. Masuda;S. Nonomura
研究了以SiH4、C2H6、b2h6、h24为原料，在低温TS条件下用热线气相沉积法制备掺b异质硅碳合金（SiCX）薄膜的性能。碳含量C/(Si+C)受C2H6/ sih4比值控制。小C/(Si+C)的低tsp样品的光能隙EO4与大C/(Si+C)的高tsp样品的光能隙EO4基本相同。当B2H6/ sih4为0.3%时，低tsp样品的暗电导率（1.05×10−1S/cm）明显大于几乎相同EO4时的高tsp样品。
The properties of the B-doped hetero-structured silicon carbon alloy (SiCX) films deposited by hot-wire CVD using SiH4, C2H6, B2H6and H2under a low film surface temperature, TS, condition have been studied. The carbon content, C/(Si+C), was controlled with the C2H6/SiH4ratio in the low TSdeposition. The optical energy gap, EO4, in the low TSsample with small C/(Si+C) was almost same as that of the high TSsample with large C/(Si+C). The dark conductivity (1.05×10−1S/cm) of the low TSsample deposited with B2H6/SiH4of 0.3% showed much larger than that of the high TSsample with the almost same EO4.