CPP-GMR films with a current-confined-path nano-oxide layer (CCP-NOL)
CPP-GMR films with a current-confined-path nano-oxide layer (CCP-NOL)
复制标题
具有电流限制路径纳米氧化层的 CPP-GMR 薄膜 (CCP-NOL)
DOI：
10.1088/0022-3727/40/5/s01
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
H. Iwasaki
中科院分区：
文献类型：
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作者：
H. Fukuzawa;H. Yuasa;H. Iwasaki
研究了电流受限路径纳米氧化层(CCP-NOL)电流垂直面巨磁电阻(CPP-GMR)自旋阀薄膜的性能和纳米结构。通过应用离子辅助氧化(IAO)来形成CCP-NOL，我们将传统Co90Fe10层在小RA值500 mΩ µm2时的MR比率提高到5.4%。此外，使用bcc-Fe50Co50还可以在580 mΩ µm2的小RA值下将MR比率提高到8.2%。修正的CCP-NOL的Valet-Fert模型表明，IAO的MR增强是由于CCP的电阻率的提高，而Fe50Co50的MR增强是由于更大的自旋相关的界面散射效应。横截面电子显微镜和三维原子探针分析证实了CCP-NOL结构的形成。对测试元件设备的可靠性测试表明，即使在加速应力下也几乎没有变化。具有CCP-NOL的CPP-GMR自旋阀薄膜可扩展到未来的高密度记录头，这是因为它有可能在较小的RA值下获得更高的MR比。
We investigated the film performance and nanostructure of current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) spin-valve film with a current-confined-path nano-oxide layer (CCP-NOL). By applying ion-assisted oxidation (IAO) for the CCP-NOL formation, we enhanced the MR ratio to 5.4% at a small RA value of 500 mΩ µm2 for conventional Co90Fe10 layers. Furthermore, the use of bcc-Fe50Co50 also increased the MR ratio to 8.2% at a small RA value of 580 mΩ µm2. A modified Valet–Fert model for the CCP-NOL showed that the MR enhancement by the IAO is due to the improvement in resistivity of the CCP, and that by Fe50Co50 is due to a larger spin-dependent interface scattering effect. Analysis by cross-sectional TEM and three-dimensional atom probe confirmed the formation of the CCP-NOL structure. A reliability test for test element devices showed almost no change even under acceleration stress. The CPP-GMR spin-valve film with the CCP-NOL is extendable to future high-density recording heads due to its potential for a higher MR ratio at a small value of RA.