Switching operation in intersectional type field effect MQW optical switch

Switching operation in intersectional type field effect MQW optical switch
复制标题

交叉型场效应MQW光开关的开关操作

DOI:
10.1049/el:19880281
复制
发表时间:
1988
影响因子:
1.1
通讯作者:
K. Matsubara
K. Matsubara
中科院分区:
工程技术4区
文献类型:
--
作者:
K. G. Ravikumar;K. Shimomura;T. Kikugawa;A. Izumi;S. Arai;Y. Suematsu;K. Matsubara

文献摘要

被引文献

相似文献

利用电场引起的折射率变化和吸收系数变化引起的光反射,首次观察到了交叉型场效应光开关中的开关操作。报道了具有4度交叉角的GaInAsP/InP多量子阱脊形光波导结构的开关工作。还观察到了源于量子阱结构的偏振相关性质。>
Switching operation in an intersectional-type field effect multiquantum-well optical switch was observed for the first time from light reflection caused by the electric-field-induced refractive index variation and absorption coefficient change. The authors report switching operation in a GaInAsP/InP MQW ridge waveguide structure with an intersection angle of 4 degrees . Polarisation dependent properties originating from the quantum-well structure were also observed. >