Is graphene on copper doped?
Is graphene on copper doped?
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DOI：
10.1002/pssr.201307224
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发表时间：
2013-09-01
影响因子：
2.8
通讯作者：
Bell, Gavin R.
中科院分区：
文献类型：
--
作者：
Marsden, Alexander J.;Asensio, Maria-Carmen;Bell, Gavin R.
角分辨光电子能谱 (ARPES) 和 X 射线光电子能谱已用于表征通过低压化学气相沉积在铜箔上生长的外延有序石墨烯。短时真空退火至 200 摄氏度可以观察有序的低能电子衍射图案。高质量狄拉克锥在 ARPES 中测量，狄拉克点位于费米能级（未掺杂石墨烯）。 300 摄氏度以上的退火会在石墨烯中产生 n 型掺杂，费米能级偏移高达 350 meV，并打开约 100 meV 的带隙。 (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
Angle-resolved photoemission spectroscopy (ARPES) and X-ray photoemission spectroscopy have been used to characterise epitaxially ordered graphene grown on copper foil by low-pressure chemical vapour deposition. A short vacuum anneal to 200 degrees C allows observation of ordered low energy electron diffraction patterns. High quality Dirac cones are measured in ARPES with the Dirac point at the Fermi level (undoped graphene). Annealing above 300 degrees C produces n-type doping in the graphene with up to 350 meV shift in Fermi level, and opens a band gap of around 100 meV. (c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim