Study of boron diffusion in MgO in CoFeB∣MgO film stacks using parallel electron energy loss spectroscopy
Study of boron diffusion in MgO in CoFeB∣MgO film stacks using parallel electron energy loss spectroscopy
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DOI：
10.1063/1.3090035
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发表时间：
2009-02
影响因子：
4
通讯作者：
S. Mukherjee;D. MacMahon;F. Bai;Chih-Ling Lee;S. Kurinec
中科院分区：
文献类型：
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作者：
S. Mukherjee;D. MacMahon;F. Bai;Chih-Ling Lee;S. Kurinec
使用透射电子显微镜和平行电子能量损失谱研究了溅射CoFeB MgO的退火薄膜叠层中MgO中的硼扩散。分析表明，显着的B运动时，薄膜退火，形成BOx络合物。在300-400°C的温度范围内退火的薄膜的特征扩散长度已经被估计用于磁性隧道结的制造。从这些数据中提取了1.3eV（±0.4eV）的活化能，这些数据代表B通过空位和缺陷态在MgO中扩散，所述空位和缺陷态由BOx络合物的形成介导。
Boron diffusion in MgO has been investigated in annealed film stacks of sputtered CoFeB∣MgO using transmission electron microscopy and parallel electron energy loss spectroscopy. The analyses show significant B movement when the films are annealed, with the formation of BOx complexes. Characteristic diffusion lengths have been estimated in films annealed at the commonly employed temperature range of 300–400°C for the fabrication of magnetic tunnel junctions. An activation energy of 1.3eV (±0.4eV) has been extracted from these data that represent B diffusion in MgO through vacancies and defect states mediated by the formation of BOx complexes.