Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System

Multi-Scale Monte Carlo Simulation of Soft Errors Using PHITS-HyENEXSS Code System
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DOI:
10.1109/radecs.2011.6131413
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发表时间:
2012
影响因子:
1.8
通讯作者:
Shin-ichiro Abe;Y. Watanabe;Nozomi Shibano;N. Sano;Hiroshi Furuta;Masafumi Tsutsui;T. Uemura;T. Arakawa
Shin-ichiro Abe;Y. Watanabe;Nozomi Shibano;N. Sano;Hiroshi Furuta;Masafumi Tsutsui;T. Uemura;T. Arakawa
中科院分区:
工程技术3区
文献类型:
--
作者:
Shin-ichiro Abe;Y. Watanabe;Nozomi Shibano;N. Sano;Hiroshi Furuta;Masafumi Tsutsui;T. Uemura;T. Arakawa

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本文提出了一种将粒子输运码PHITS与三维TCAD模拟器HyENEXSS连接起来的中子软误差多尺度蒙特卡罗模拟方法。开发了PHITS和HyENEXSS之间的接口工具,以生成针对中子入射器件同时产生多个向任意方向延伸的二次离子的事件优化的网格结构。使用接口工具,我们可以基于逐个事件的设备模拟执行软错误率(SERs)的蒙特卡罗计算。PHITS-HyENEXSS代码系统已成功应用于65 nm, 45 nm和32 nm技术的mosfet的SER分析。
We have proposed a multi-scale Monte Carlo simulation method of neutron induced soft errors by linking a particle transport code PHITS and a 3-D TCAD simulator HyENEXSS. An interface tool between PHITS and HyENEXSS is developed to generate the mesh structure optimized for an event where multiple secondary ions extending to arbitrary directions are generated simultaneously by neutron incidence on device. Using the interface tool, we have made it possible to perform the Monte Carlo calculation of soft error rates (SERs) based on event-by-event device simulation. The PHITS-HyENEXSS code system has been successfully applied to SER analyses for 65 nm, 45 nm, and 32 nm technology MOSFETs.