1.52-1.59-μm range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer
1.52-1.59-μm range different-wavelength modulator-integrated DFB-LDs fabricated on a single wafer
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在单晶圆上制造的 1.52-1.59 μm 范围不同波长调制器集成 DFB-LD
DOI：
10.1109/68.681273
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发表时间：
1998
影响因子：
2.6
通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
--
作者：
Koji Kudo;M. Ishizaka;Tokuhito Sasaki;Hiroyuki Yamazaki;M. Yamaguchi
本文首次报道了在单片上制备的不同波长调制集成分布反馈激光二极管（DFB/MODs），其激光波长几乎覆盖了从1.527到1.593 /spl mu/m的扩展掺铒光纤放大器（EDFA）增益带。该器件具有均匀和高性能的特性，如阈值电流小于12 mA，通过普通光纤成功传输2.5 Gb/s-600 km。
We report for the first time different-wavelength modulator-integrated distributed-feedback laser diodes (DFB/MODs) fabricated on a single wafer, whose lasing wavelength cover almost all of the expanded erbium-doped fiber amplifier (EDFA) gain band from 1.527 to 1.593 /spl mu/m. The devices provided uniform and high-performance characteristics such as a threshold current less than 12 mA and successful transmission of 2.5 Gb/s-600 km through a normal fiber.