Polarization fields in (Zn,Cd)O/ZnO quantum well structures
Polarization fields in (Zn,Cd)O/ZnO quantum well structures
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DOI：
10.1103/physrevb.77.113312
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发表时间：
2008-03-01
影响因子：
3.7
通讯作者：
Henneberger, F.
中科院分区：
文献类型：
--
作者：
Kalusniak, S.;Sadofev, S.;Henneberger, F.
当阱宽从1.2 nm增加到5.4 nm时，（Zn，Cd）O/ZnO量子阱结构中存在约10（8）V/m的极化诱导电场，光致发光的低能位移为100 meV，寿命从亚ns急剧增加到100 μ s.光生载流子对这些场的有效屏蔽已经在10 kW/cm（2）范围内的中等光激发下发生。
The presence of polarization-induced electric fields of some 10(8) V/m in (Zn, Cd)O/ZnO quantum well structures is uncovered by a low-energy shift of the photoluminescence of several 100 meV as well as a dramatic increase of the lifetime from the sub-ns to the 100 mu s time scale when the well width increases from 1.2 to 5.4 nm. Effective screening of these fields by photogenerated carriers occurs already at moderate optical excitation in the 10 kW/cm(2) range.