Improved ferroelectric polarization of V-doped Bi6Fe2Ti3O18 thin films prepared by a chemical solution deposition
Improved ferroelectric polarization of V-doped Bi6Fe2Ti3O18 thin films prepared by a chemical solution deposition
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DOI：
10.1063/1.4922966
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发表时间：
2015-06
影响因子：
3.2
通讯作者：
D. Song;Jie Yang;B. Yuan;X. Zuo;Xianwu Tang;Liu Chen;W. Song;Xuebin Zhu;Yuping Sun
中科院分区：
文献类型：
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作者：
D. Song;Jie Yang;B. Yuan;X. Zuo;Xianwu Tang;Liu Chen;W. Song;Xuebin Zhu;Yuping Sun
采用化学溶液沉积法在Pt/Ti/SiO2/Si（100）衬底上制备了V掺杂的Bi 6 Fe 2 Ti 3 O 18薄膜，研究了V掺杂对Bi 6 Fe 2 Ti 3 O 18薄膜的微结构、介电、漏电和铁电性能的影响。Bi5.97Fe2Ti2.91V0.09O18薄膜具有改善的介电性能、漏电流和铁电性能。钒的掺入使Bi5.97Fe2Ti2.91V0.09O18薄膜的剩余极化强度（2 Pr）从Bi 6 Fe 2 Ti 3 O 18薄膜的10 μC/cm 2提高到30 μC/cm 2以上。结果表明，V掺杂抑制了薄膜中的氧空位，降低了氧空位的迁移率，提高了薄膜的结晶度，从而改善了薄膜的性能。研究结果对化学溶液沉积法制备Bi 6 Fe 2 Ti 3 O 18薄膜的铁电性能优化具有指导意义，对进一步探索单相多铁性具有重要意义。
We prepared V-doped Bi6Fe2Ti3O18 thin films on Pt/Ti/SiO2/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi6Fe2Ti3O18 thin films. The Bi5.97Fe2Ti2.91V0.09O18 thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2Pr) over 30 μC/cm2 in Bi5.97Fe2Ti2.91V0.09O18 thin film compared with 10 μC/cm2 in Bi6Fe2Ti3O18 thin film. It is demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi6Fe2Ti3O18 thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the ...