Significant Effects of Electrode Metal Work Function on Resistive Memory Devices with Gelatin Biodielectric Layer
Significant Effects of Electrode Metal Work Function on Resistive Memory Devices with Gelatin Biodielectric Layer
复制标题
电极金属功函数对具有明胶生物介电层的阻变存储器件的显着影响
DOI：
10.1149/2.0701807jes
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发表时间：
2018
影响因子：
3.9
通讯作者：
Luo Jikui
中科院分区：
文献类型：
--
作者：
Liu Shuting;Dong Shurong;Jin Hao;Huang Shuyi;Wang Xiaozhi;Luo Jikui
本研究以生物材料明胶为介电层，以银（Ag）、铜（Cu）、钨（W）和金（Au）为上电极，研制了金属/明胶/钨（W）RRAM器件，研究了电极金属对器件特性的影响。所有类型的RRAM器件都表现出不同性能的双极阻变特性。TE和底部电极（BE）金属之间的功函数差异被发现在确定器件的特性甚至反转设置和重置过程中起着深远的作用。TE和BE金属之间功函数差较大的器件具有更高和更稳定的开/关电阻比。Ag/gelatin/W器件具有相对稳定的开关行为，开关电阻比大于102，而Au TE器件由于Au和W之间的正功函数差较大，开关电阻比大于105，开关过程相反。实验证实了金属导电丝对器件的开关行为起作用，而导电丝中的金属元素取决于上下电极所用金属的功函数差。
Biomaterials gelatin is used as the dielectric layer in this work to develop metal/gelatin/Tungsten (W) RRAM devices, with silver (Ag), copper (Cu), W, and gold (Au) as the top electrode (TE) to study the effects of electrode metals on device characteristics. All types of the RRAM devices exhibit bipolar resistive switching characteristics with diverse performances. The work function difference between the TE and bottom electrode (BE) metals is found to play a profound role in determining the characteristics of the devices and even reversing the set and reset processes. The devices with larger work function difference between the TE and BE metals have higher and more stable on/off resistance ratio. The Ag/gelatin/W devices exhibit a relatively stable switching behavior with an on/off resistance ratio of >102, while that with Au TE exhibits a reversed set and reset processes with a high on/off resistance ratio of >105 owing to the large positive work function difference between Au and W. Metallic conductive filaments are confirmed to be responsible for the switching behaviors of the devices experimentally, and what metal element in the conductive filaments is determined by the work function difference of the metals used for the top and bottom electrodes.