Doping effects on the electrical conductivity of bismuth layered Bi3TiNbO9-based ceramics
Doping effects on the electrical conductivity of bismuth layered Bi3TiNbO9-based ceramics
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DOI：
10.1063/1.2245210
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发表时间：
2006-08
影响因子：
3.2
通讯作者：
Zhiyong Zhou;Xianlin Dong;Haixue Yan;Heng Chen;C. Mao
中科院分区：
文献类型：
--
作者：
Zhiyong Zhou;Xianlin Dong;Haixue Yan;Heng Chen;C. Mao
采用固相反应法制备了Sr 2+取代Bi 3+为受主掺杂，Nb 5+和W 6+取代Ti4+为施主掺杂的单相Bi 3 TiNbO 9（BTNO）基陶瓷。电导率随着受主掺杂剂的增加而增加，随着施主掺杂剂的增加而降低。这些结果表明，纯BTNO的主要导电机制是在低温范围内的p型。对W ~（6+）施主掺杂BTNO陶瓷的详细研究表明，当掺杂量x>0.01时，随着施主掺杂量的增加，电导率增加，表明在低温区非本征电导由p型转变为n型。随着施主掺杂量的增加，非本征电导率范围向高温扩展。在高温区，本征电导激活能约为1.8eV。该值等于带隙能量的一半。
Single phase Bi3TiNbO9 (BTNO)-based ceramics, with Sr2+ replacing Bi3+ as an acceptor dopant and Nb5+ and W6+ replacing Ti4+ as donor dopants, were prepared by conventional solid-state reaction method. The conductivity increased with acceptor dopant and decreased with donor dopant. These results indicate that the dominant conduction mechanism of pure BTNO is p type at low temperature range. Detailed investigations about the W6+ donor doped BTNO ceramics showed that when the doping amount x>0.01, the conductivity increases with increasing donor doping amount, suggesting that the extrinsic conductivity changes from p type to n type at the low temperature region. The extrinsic conductivity range extends to higher temperature with the increase of donor doping amount. At high temperature range the intrinsic electrical conductivity activation energy is about 1.8eV. This value is equal to half the band gap energy.