Investigation of a new In2O3-based selective H2 gas sensor with low power consumption
Investigation of a new In2O3-based selective H2 gas sensor with low power consumption
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DOI:
10.1016/j.matchemphys.2004.01.043
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发表时间:
2005-04
影响因子:
4.6
通讯作者:
Zili Zhan;D. Jiang;Jiaqiang Xu
中科院分区:
文献类型:
--
作者:
Zili Zhan;D. Jiang;Jiaqiang Xu
The nanometer-size In2O3was synthesized via a reverse microemulsion. A new catalytic combustion-type In2O3-based H2gas sensor was developed based on the technology for fabricating the direct-heating-type sensor and a surface-modifying process. A dense SiO2layer near the surface of the sensor was formed by chemical vapor deposition (CVD) of hexamethyldisiloxane (HMDS). The SiO2layer, which acted as a molecular sieve, reduced the penetration of large molecular, such as C2H5OH, CH4, i-C4H10, into the sensing layer, resulting in the improvement of selectivity to H2. The sensitive properties and the working mechanism of the sensor were presented. The In2O3nanoparticles prepared by microemulsion were characterized by transmission electron microscopy and X-ray diffraction.