Investigation of a new In2O3-based selective H2 gas sensor with low power consumption

Investigation of a new In2O3-based selective H2 gas sensor with low power consumption
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DOI:
10.1016/j.matchemphys.2004.01.043
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发表时间:
2005-04
影响因子:
4.6
通讯作者:
Zili Zhan;D. Jiang;Jiaqiang Xu
Zili Zhan;D. Jiang;Jiaqiang Xu
中科院分区:
材料科学3区
文献类型:
--
作者:
Zili Zhan;D. Jiang;Jiaqiang Xu

文献摘要

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通过反相微乳液合成了纳米尺寸的In2O3。基于直热式传感器的制造技术和表面改性工艺,开发了一种新型催化燃烧式In2O3基氢气传感器。通过六甲基二硅氧烷(HMDS)的化学气相沉积(CVD)在传感器表面附近形成致密的SiO2层。 SiO2层作为分子筛,减少了C2H5OH、CH4、i-C4H10等大分子渗透到传感层中,从而提高了对H2的选择性。介绍了该传感器的敏感特性和工作机理。采用透射电镜和X射线衍射仪对微乳液制备的In2O3纳米粒子进行了表征。
The nanometer-size In2O3was synthesized via a reverse microemulsion. A new catalytic combustion-type In2O3-based H2gas sensor was developed based on the technology for fabricating the direct-heating-type sensor and a surface-modifying process. A dense SiO2layer near the surface of the sensor was formed by chemical vapor deposition (CVD) of hexamethyldisiloxane (HMDS). The SiO2layer, which acted as a molecular sieve, reduced the penetration of large molecular, such as C2H5OH, CH4, i-C4H10, into the sensing layer, resulting in the improvement of selectivity to H2. The sensitive properties and the working mechanism of the sensor were presented. The In2O3nanoparticles prepared by microemulsion were characterized by transmission electron microscopy and X-ray diffraction.