Effects of boundary roughness on the conductance of quantum wires
Effects of boundary roughness on the conductance of quantum wires
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DOI：
10.1063/1.1311606
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发表时间：
2000-10
影响因子：
4
通讯作者：
D. Csontos;Hongqi Xu
中科院分区：
文献类型：
--
作者：
D. Csontos;Hongqi Xu
研究了边界粗糙度对量子线中电子输运的一般影响。结果发现，粗糙的量子线的电导表现出快速的波动和强大的，在非常低的温度下，相邻的平台之间的宽骤降，并在升高的温度下的平台结构的恢复。研究还发现，在恢复的平台结构中，台阶值被抑制，电导在相邻台阶之间显示出长的过渡区。这些结果与已有的实验结果一致，并可作为量子线制备过程的评价准则。
The generic effects induced by boundary roughness on the electron transport through quantum wires have been studied. It is found that the conductance of the rough quantum wires shows rapid fluctuations and strong, broad dips between adjacent plateaus at very low temperatures, and a recovery of the plateau structure at increased temperatures. It is also found that in the recovered plateau structure, the step values are suppressed and the conductance shows long transition regions between adjacent steps. These results agree with existing experiments and can be used as a guideline for the evaluation of the fabrication process of quantum wires.